Embedded-mask-methods for mm-scale multi-layer vertical/slanted Si structures
Embedded-mask-methods for mm-scale multi-layer vertical/slanted Si structures
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用于毫米级多层垂直/倾斜硅结构的嵌入式掩模方法
DOI：
10.1109/memsys.2000.838533
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
H. Fujita
中科院分区：
文献类型：
--
作者：
Y. Mita;M. Mita;A. Tixier;J. Gouy;H. Fujita
具有多个高度和垂直/倾斜壁的复杂深蚀刻结构已经通过全硅基批量制造工艺实现，该工艺仅需要在平坦表面上进行光刻。在衬底的初始表面上层压任意数量的掩模层，随后使用每个掩模层进行深RIE、LOCOS或各向异性湿法蚀刻以制造微结构。
Complicated deep-etched structures having multiple heights and vertical/slanted walls have realized by fully-silicon-based batch fabrication process, which only needs lithography on a flat surface. Arbitrary numbers of mask layers were laminated on the initial surface of a substrate and deep-RIE, LOCOS or anisotropic wet etching were performed to make microstructures using each mask layer subsequently.