Fault energies in ordered and disordered Cu3Au

Fault energies in ordered and disordered Cu3Au
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有序和无序 Cu3Au 中的缺陷能量

DOI:
10.1080/00318087608225783
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发表时间:
1976
影响因子:
1.6
通讯作者:
B. Ramaswami
B. Ramaswami
中科院分区:
材料科学3区
文献类型:
--
作者:
S. Sastry;B. Ramaswami

文献摘要

被引文献

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用电子显微镜的弱束方法对有序和无序Cu3Au中的部分位错进行了成像。由测量的扩展位错组态间距确定了有序和无序Cu3Au的层错能(γ)和有序Cu3Au的反相界能(APb)。结果表明,γ使Cu3Au<γ无序排列,这与层错几率测量结果一致。对全有序Cu3Au(39±5erg cm−2)的APB能量的实验值与理论值进行了比较。
Abstract Partial dislocations in ordered and disordered Cu3Au were imaged using the weak-beam method of electron microscopy. The stacking fault energies (γ) of ordered and disordered Cu3Au and the antiphase boundary (APB) energy on {111} planes of ordered Cu3Au were determined from the measured spacings of extended dislocation configurations. It is found that γ ordered Cu3Au < γ disordered Cu3Au in agreement with the results of measurements of stacking fault probability. The experimental value of APB energy in fully ordered Cu3Au (39±5 erg cm−2) is compared with theoretical estimates.