2 in. Free-standing GaN grown by HVPE with sputtered AlN buffer on GaAs substrate
2 in. Free-standing GaN grown by HVPE with sputtered AlN buffer on GaAs substrate
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DOI：
10.1016/j.jcrysgro.2020.125637
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发表时间：
2020-06
影响因子：
1.8
通讯作者：
Z. Xingyu;Jiejun Wu;Yutian Cheng;Boyu Dong;Bingliang Guo;Mengda Li;Zhao Qiyue-;Guoyi Zhang;T. Yu
中科院分区：
文献类型：
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作者：
Z. Xingyu;Jiejun Wu;Yutian Cheng;Boyu Dong;Bingliang Guo;Mengda Li;Zhao Qiyue-;Guoyi Zhang;T. Yu
