Two-dimensional graphitic carbon nitride/N-doped carbon with a direct Z-scheme heterojunction for photocatalytic generation of hydrogen.
Two-dimensional graphitic carbon nitride/N-doped carbon with a direct Z-scheme heterojunction for photocatalytic generation of hydrogen.
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具有直接 Z 型异质结的二维石墨氮化碳/氮掺杂碳，用于光催化产氢
DOI：
10.1039/d1na00629k
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发表时间：
2021-11-24
影响因子：
4.7
通讯作者：
中科院分区：
文献类型：
--
作者：
具有直接Z-型异质结结构的光催化剂具有高效的载流子分离、较高的氧化还原能力和无后发光催化反应等优点，具有广阔的应用前景。它们的活性取决于电荷载流子动力学的能带排列和两个半导体之间的界面构型以及光化学反应的有效活性中心。本文采用气体模板(NH4Cl)辅助热缩合的方法合成了二维石墨化氮化碳/氮掺杂碳(C3N4/NC)光催化剂。C3N4/NC具有直接Z型异质结、2D-2D界面接触、比表面积增大等优点，可改善电荷分离动力学，为光化学反应提供丰富的活性中心。在可见光照射下，它的光催化产氢速率比块体C3N4提高了46倍以上。这项工作展示了二维Z-晶型异质结在光催化方面的巨大潜力，并将启发未来更多的相关工作。C_3N_4/N掺杂碳(C_3N_4/NC)光催化剂由于具有直接的Z-型异质结、2D-2D界面和较大的比表面积，在可见光驱动下的产氢率是块体C_3N_4的46倍以上。
Photocatalysts with a direct Z-scheme heterojunction are promising by virtue of the effectively enhanced separation of charge carriers, high retention of redox ability and the absence of backward photocatalytic reactions. Their activity depends on band alignment and interfacial configurations between two semiconductors for charge carrier kinetics and the effective active sites for photochemical reactions. Herein, a two-dimensional (2D) graphitic carbon nitride/N-doped carbon (C3N4/NC) photocatalyst is synthesized by a gas template (NH4Cl)-assisted thermal condensation method. C3N4/NC has the synthetic merits of a direct Z-scheme heterojunction, 2D–2D interfacial contact, and enhanced specific surface area to improve charge separation kinetics and provide abundant active sites for photochemical reaction. It exhibits an over 46-fold increase of the photocatalytic hydrogen production rate compared to bulk C3N4 under visible light illumination. This work demonstrates the great potential of 2D Z-scheme heterojunctions for photocatalysis and will inspire more related work in the future. A graphitic carbon nitride/N-doped carbon (C3N4/NC) photocatalyst exhibits an over 46-fold increase of the visible-light-driven H2 production rate compared to bulk C3N4 due to its direct Z-scheme heterojunction, 2D–2D interfaces, and large specific surface area.
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影响因子：
8.6
作者：
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通讯作者：
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影响因子：
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DOI：
10.1016/j.colsurfa.2020.124552
发表时间：
2020-04-20
影响因子：
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作者：
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影响因子：
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作者：
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通讯作者：
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