Strain effects on InxAl1-xN crystalline quality grown on GaN templates by metalorganic chemical vapor deposition
Strain effects on InxAl1-xN crystalline quality grown on GaN templates by metalorganic chemical vapor deposition
复制标题
金属有机化学气相沉积对 GaN 模板上生长的 InxAl1-xN 晶体质量的应变影响
DOI：
10.1063/1.3305397
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发表时间：
2010-02-15
影响因子：
3.2
通讯作者：
Shen, B.
中科院分区：
文献类型：
--
作者：
Miao, Z. L.;Yu, T. J.;Shen, B.
采用金属有机化学气相沉积（MOCVD）方法，在GaN模板上生长了不同应变状态下的InxAl 1-xN外延层（厚度约为200 nm）。当应变较小时（0.166 < x < 0.208），InxAl_（1-xN）外延层与GaN模板几乎完全共格，表面呈现类似于小凸起和均匀凹坑的特征。在大的拉伸应变情况下，表面出现裂纹，但表面形貌的影响较小的小应变相比。然而，与大的压缩应变，表面粗糙度显着增加，并出现额外的较小的坑与部分应变弛豫发生在生长过程中。此外，通过透射电子显微镜进一步研究了微观结构。结果表明，即使是轻微的松弛的压缩应变可以导致显着的影响的InxAl 1-xN薄膜的结构质量和表面形貌。
InxAl1-xN epilayers (similar to 200 nm thick) under different strain states were grown on GaN templates by metalorganic chemical vapor deposition. When the strain is small (0.166 < x < 0.208), InxAl1-xN epilayers are almost fully coherent with the GaN templates, and the surface presents similar characteristic of small hillocks and uniform pits. In the case of large tensile strain, cracks emerged on the surface, but the surface morphology is less influenced compared to the samples with small strain. However, with large compressive strain, the surface roughness dramatically increased and additional smaller pits emerged with partial strain relaxation occurring during growth. In addition, the microstructures were further investigated by transmission electron microscopy. It is demonstrated that even slight relaxation of compressive strain can lead to notable influence on the structural quality and surface morphology of InxAl1-xN films.