Growth of Highly Oriented CoCrTa films by Inductively Coupled Plasma-Assisted Sputtering
Growth of Highly Oriented CoCrTa films by Inductively Coupled Plasma-Assisted Sputtering
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电感耦合等离子体辅助溅射高取向 CoCrTa 薄膜的生长
DOI：
10.1143/jjap.42.3641
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发表时间：
2003
影响因子：
1.5
通讯作者：
K. Yamauchi
中科院分区：
文献类型：
--
作者：
K. Okimura;K. Yamauchi
采用感应耦合等离子体(ICP)辅助内线圈溅射方法制备了用于磁记录介质的CoCrTa铁磁性薄膜。实现了在低温硅片和玻璃衬底上生长高度取向的晶态钴薄膜。极图测量表明，Co为面心立方结构，(111)面平行于衬底，而通过调节插入线圈的射频功率和衬底温度，可以得到c轴垂直于玻璃衬底的六方密堆积晶体薄膜。在射频功率为120W的线圈中，1.3Pa时的沉积速率是常规溅射的两倍多，而射频功率为150W时的沉积速率是常规溅射的两倍以上。用扫描电子显微镜(SEM)、X射线光电子能谱(XPS)和振动样品磁强计(VSM)对薄膜的性能进行了表征，表明了等离子体辅助溅射铁磁靶的优越性能。
Inductively coupled plasma (ICP)-assisted sputtering using an internal coil was applied to the deposition of ferromagnetic Co-based alloy (CoCrTa) films intended for magnetic recording media. The growth of highly oriented crystalline Co films on both low-temperature Si and glass substrates was achieved. Pole figure measurements indicated the growth of face-centered cubic Co with a (111) plane parallel to the substrate, while a hexagonal close-packed crystalline film with c-axis perpendicular to the glass substrate was obtained by adjusting the rf power applied to the inserted coil and the substrate temperature. In the ICP-assisted sputtering at a coil rf power of 120 W, the deposition rate at a pressure of 1.3 Pa was more than two times higher than that of conventional sputtering at the same target rf power of 150 W. The deposition performance responsible for highly oriented crystalline growth and higher deposition rate at low pressures was discussed in terms of target self-bias voltage and plasma parameters measured using a Langmuir probe. The film properties characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and vibrating sample magnetometer (VSM) were also presented showing the superior capability of ICP-assisted sputtering for ferromagnetic targets.