Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical light-emitting diodes
Formation of low-resistance Ohmic contacts to N-face n-GaN for high-power GaN-based vertical light-emitting diodes
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DOI：
10.1063/1.3484152
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发表时间：
2010-08
影响因子：
4
通讯作者：
J. Jeon;Seong-Han Park;S. Jung;Sang Youl Lee;Jihyung Moon;June O. Song;T. Seong
中科院分区：
文献类型：
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作者：
J. Jeon;Seong-Han Park;S. Jung;Sang Youl Lee;Jihyung Moon;June O. Song;T. Seong
我们报告了使用Al-Ga固溶体（50 nm）/Ti（30 nm）/Al（200 nm）方案形成用于高功率垂直发光二极管的N面n-GaN的低电阻欧姆接触，并将其与Ti（30 nm）/Al（200 nm）接触进行比较。Al-Ga固溶体层的引入，以尽量减少Ga空位的N面n-GaN表面附近的形成。结果表明，与Ti/Al接触不同，Al-Ga固溶体/Ti/Al接触即使在250 °C退火后也表现出欧姆行为，电阻率为4.1×10−4 Ω cm 2。进行X射线光电子能谱和二次离子质谱检查，以了解电性能的温度依赖性。
We report on the formation of low-resistance Ohmic contacts to N-face n-GaN for high-power vertical light-emitting diodes using an Al–Ga solid solution (50 nm)/Ti(30 nm)/Al(200 nm) scheme and compare them with Ti(30 nm)/Al(200 nm) contacts. The Al–Ga solid solution layer is introduced to minimize the formation of Ga vacancies near the N-face n-GaN surface. It is shown that, unlike the Ti/Al contacts, the Al–Ga solid solution/Ti/Al contacts exhibit Ohmic behavior with a resistivity of 4.1×10−4 Ω cm2, even after annealing at 250 °C. X-ray photoemission spectroscopy and secondary ion mass spectrometry examinations are performed to understand the temperature dependence of the electrical properties.