Microstructure of heavily neutron-irradiated SiC after annealing up to 1500 °C
Microstructure of heavily neutron-irradiated SiC after annealing up to 1500 °C
复制标题
DOI：
10.1016/j.jnucmat.2008.12.322
复制
发表时间：
2009-04
影响因子：
3.1
通讯作者：
T. Sawabe;M. Akiyoshi;K. Ichikawa;Katsumi Yoshida;T. Yano
中科院分区：
文献类型：
--
作者：
T. Sawabe;M. Akiyoshi;K. Ichikawa;Katsumi Yoshida;T. Yano
在480、585、730和735°C下用28 - 42 dpa的快中子辐照β-SiC试样。在高达1500°C下进行辐照后退火。测量了宏观长度和晶格参数的变化。在1500 ℃退火后，在585 ℃以上辐照（~ 40 dpa）的试样，宏观长度的膨胀不能完全恢复。退火后，在585°C以上辐照的样品（约40 dpa）的晶格参数与未辐照的值相比略有收缩。通过透射电子显微镜观察微观缺陷。在退火至1500°后，确认了收缩试样中沿着晶界的空隙形成。
β-SiC specimens were irradiated by fast neutrons up to 28 – 42dpa at 480, 585, 730 and 735°C. Post-irradiation annealing was carried out up to 1500°C. Changes in macroscopic length and lattice parameter were measured. The swelling of macroscopic length was not recovered completely in the specimens irradiated above 585°C (∼40dpa) after annealing at 1500°C. After annealing, lattice parameters of the specimens irradiated above 585°C (∼40dpa) were slightly shrunk compared to the unirradiated value. Microscopic defects were observed by transmission electron microscopy. Void formation was confirmed along grain boundaries in the shrunk specimens after annealing up to 1500°.