Introduction to organic electrochemistry
Introduction to organic electrochemistry
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有机电化学概论
DOI:
10.1149/1.2134033
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发表时间:
1974
期刊:
影响因子:
--
通讯作者:
J. Stocker
中科院分区:
文献类型:
--
作者:
M. R. Rifi;F. Covitz;J. Stocker
Book Reviews continued ject of a paper on CVD (Matthews and B] akeslee) of GaAs and GaAso.~ Po.~, and in the case of (GaAI) As on GaP (LPE)(Astles and Rowland) surface texture was investigated in view of transmission photocathode work. Further structure-oriented contributions to be mentioned here are letters concerning crystal growth terraces and surface reconstruction (Rode), the effect of germanium on the distribution coefficient of AI in the system solid AIxGal-xAs/liquid Ga-AI-As-Ge (Minden), and the work on LPE growth of GaSb (Woelk-Benz).Of particular interest for the electronic~ engineer and the solid-state physicist in industry are the contributions concerned with difficult device design and production based on LPE. We have to limit our discussion to the most important points to convey to the reader the gist of this monograpfl. There are the many methods based on" rotary crucibles"(Thompson and Kirkby), multiple boat growth with graphite slider (Dawson, Lockwood, Kressel), and the dipping method (Davies). There is also a" multislice slider" system which decants the melt and brings the substrate in contact with only a thin melt (Saul, Lorimor). Here, some of the difficulties encountered with thick melts are overcome, and it looks as if the rotating system of Lorimor may solve the industrial production problems. Finally, one should mention the papers on characterization by photoluminescence, a method already used industrially (Hitchens and Holonyak, and Outon, Lorenz, and Woodall).