Radiation-induced magnetoresistance oscillations in monolayer and bilayer graphene
Radiation-induced magnetoresistance oscillations in monolayer and bilayer graphene
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DOI：
10.1038/s41598-019-43866-4
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发表时间：
2019-05-13
影响因子：
4.6
通讯作者：
Munasinghe，R.
中科院分区：
文献类型：
--
作者：
Mani，R. G.;Kriisa，A.;Munasinghe，R.
我们研究了单层和双层石墨烯中微波/毫米波/太赫兹辐射诱导的磁阻振荡的特性，并报告说，在无质量、线性分散的单层石墨烯系统中，辐射诱导的磁阻振荡的振荡频率应该强烈地依赖于费米能和辐射频率，而不像在有质量、抛物面的GaAs/AlGaAs 2D电子系统的情况下，其中辐射感应磁阻振荡频率主要取决于辐射频率。在固定辐射频率下磁阻振荡频率对费米能级的这种可能的依赖性也表明了对门控石墨烯中的栅极电压的敏感性，这表明了单层石墨烯中的原位可调光激发响应，其可用于感测应用。与单层石墨烯形成鲜明对比的是，双层石墨烯预计将显示出与GaAs/AlGaAs 2D系统中观察到的结果更相似的辐射诱导磁阻振荡。辐射诱导的磁阻振荡的期望在这里提出，以指导未来的实验研究，在这两个现代原子层材料系统。
We examine the characteristics of the microwave/mm-wave/terahertz radiation-induced magnetoresistance oscillations in monolayer and bilayer graphene and report that the oscillation frequency of the radiation-induced magnetoresistance oscillations in the massless, linearly dispersed monolayer graphene system should depend strongly both on the Fermi energy, and the radiation frequency, unlike in the case of the massive, parabolic, GaAs/AlGaAs 2D electron system, where the radiation-induced magnetoresistance oscillation frequency depends mainly on the radiation frequency. This possible dependence of the magnetoresistance oscillation frequency on the Fermi level at a fixed radiation frequency also suggests a sensitivity to the gate voltage in gated graphene, which suggests anin-situtunable photo-excitation response in monolayer graphene that could be useful for sensing applications. In sharp contrast to monolayer graphene, bilayer graphene is expected to show radiation-induced magnetoresistance oscillations more similar to the results observed in the GaAs/AlGaAs 2D system. Such expectations for the radiation-induced magnetoresistance oscillations are presented here to guide future experimental studies in both of these modern atomic layer material systems.