Ultrawide band quantum dot light emitting device by postfabrication laser annealing
Ultrawide band quantum dot light emitting device by postfabrication laser annealing
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DOI：
10.1063/1.2458515
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发表时间：
2007-02-05
影响因子：
4
通讯作者：
Teo, S. L.
中科院分区：
文献类型：
--
作者：
Chia, C. K.;Chua, S. J.;Teo, S. L.
采用激光后处理技术制备了一种带宽为360 nm、覆盖1284 ~ 1644 nm光谱范围的超宽带量子点发光器件（LED）。激光退火后，量子点LED的集成光输出增加了4倍，这是由于量子点的均匀性得到改善，混合后活性区域的横向电学和光约束得到增强。在激光退火区获得了315 nm的大波长蓝移，激光退火后的量子点LED的带宽总体提高了22%。
An ultrawide band quantum dot (QD) light emitting device (LED) with bandwidth of 360 nm covering 1284-1644 nm spectral range has been demonstrated by postfabrication laser-irradiation technique. The integrated light output of the QD LED was found to increase by four times after laser annealing, attributed to the improved homogeneity of the QDs and enhanced lateral electrical and optical confinements at the active region after intermixing. Large wavelength blueshift of 315 nm has been obtained at the laser annealed region and an overall increase in bandwidth of 22% has been obtained in the QD LED after postfabrication laser annealing.