Direct imprinting of dielectric materials for dual damascene processing
Direct imprinting of dielectric materials for dual damascene processing
复制标题
用于双镶嵌加工的介电材料的直接压印
DOI：
10.1117/12.599977
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发表时间：
2005
影响因子：
3.3
通讯作者：
C. Willson
中科院分区：
文献类型：
--
作者：
M. Stewart;J. Wetzel;G. Schmid;F. Palmieri;E. Thompson;E. K. Kim;David Wang;Ken Sotodeh;Kane Jen;Stephen C. Johnson;J. Hao;M. Dickey;Yukio Nishimura;R. Laine;D. Resnick;C. Willson
先进的微处理器需要几个（八个或更多）级别的布线来将信号和功率从晶体管传输到晶体管和外部世界。每个布线层必须通过通孔/接触层连接到其上方和下方的层。用于制造这些互连结构的双互连方法同时产生布线层和通孔层，从而减少了处理步骤的总数。然而，双布线策略（其有几种变体）仍然需要每个布线层大约二十个工艺步骤。在这项工作中，一种基于步进和闪光压印光刻（SFIL）的光刻工艺进行了讨论。这种压印光刻过程所需的步骤不到标准双压印光刻方法的一半。通过使用具有两级图案化的压印模板，单个压印光刻步骤可以代替两个光刻步骤。如果压印抗蚀剂材料本身是功能性介电材料，则进一步的效率是可能的。这项工作是一个示范的兼容性压印光刻（特别是SFIL）与后端的线处理使用双双光刻方法与功能材料。
Advanced microprocessors require several (eight or more) levels of wiring to carry signal and power from transistor to transistor and to the outside world. Each wiring level must make connection to the levels above and below it through via/contact layers. The dual damascene approach to fabricating these interconnected structures creates a wiring level and a via level simultaneously, thereby reducing the total number of processing steps. However, the dual damascene strategy (of which there are several variations) still requires around twenty process steps per wiring layer. In this work, an approach to damascene processing that is based on step-and-flash imprint lithography (SFIL) is discussed. This imprint damascene process requires fewer than half as many steps as the standard photolithographic dual damascene approach. By using an imprint template with two levels of patterning, a single imprint lithography step can replace two photolithography steps. Further efficiencies are possible if the imprint resist material is itself a functional dielectric material. This work is a demonstration of the compatibility of imprint lithography (specifically SFIL) with back-end-of-line processing using a dual damascene approach with functional materials.