Mutual Ferromagnetic-Ferroelectric Coupling in Multiferroic Copper-Doped ZnO
Mutual Ferromagnetic-Ferroelectric Coupling in Multiferroic Copper-Doped ZnO
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DOI：
10.1002/adma.201004519
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发表时间：
2011-04-12
影响因子：
29.4
通讯作者：
Ding, Jun
中科院分区：
文献类型：
--
作者：
Herng, Tun Seng;Wong, Meng Fei;Ding, Jun
一个相互铁磁和铁电耦合（多铁性行为），在铜掺杂的ZnO被证明通过确定性控制的铜掺杂和缺陷工程。多价铜离子和氧空位的共存对ZnO：Cu的多铁性有重要影响。样品显示出清晰的铁电和铁磁畴图案。这些域结构可以通过电和磁偏置可逆地写入。
A mutual ferromagnetic and ferroelectric coupling (multiferroic behavior) in Cu-doped ZnO is demonstrated via deterministic control of Cu doping and defect engineering. The coexistence of multivalence Cu ions and oxygen vacancies is important to multiferroic behaviors in ZnO:Cu. The samples show clear ferroelectric and ferromagnetic domain patterns. These domain structures may be written reversibly via electric and magnetic bias.