Chemical Mechanical Polishing of Silicon Carbide
Chemical Mechanical Polishing of Silicon Carbide
复制标题
DOI：
--
复制
发表时间：
1999-04
期刊：
影响因子：
--
通讯作者：
J. Powell;Pirouz
中科院分区：
文献类型：
--
作者：
J. Powell;Pirouz
NASA刘易斯研究中心的高温集成电子和传感器(HTIES)团队正在开发碳化硅(SIC)，作为一种使许多航空航天应用能够使用的电子技术。刘易斯团队正专注于化学气相沉积薄单晶碳化硅薄膜，用来制造器件。这些薄膜是在商业晶片上沉积(即外延“生长”)的，必须由具有极少结构缺陷的单晶组成，以使衍生器件具有令人满意和可靠的性能。我们与凯斯西储大学的皮鲁兹教授(NASA Grant)合作，开发了一种化学机械抛光(CMP)技术，用于在单晶碳化硅薄膜外延生长之前消除亚表面抛光损伤。
The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) as an enabling electronic technology for many aerospace applications. The Lewis team is focusing on the chemical vapor deposition of the thin, single-crystal SiC films from which devices are fabricated. These films, which are deposited (i.e., epitaxially "grown") on commercial wafers, must consist of a single crystal with very few structural defects so that the derived devices perform satisfactorily and reliably. Working in collaboration (NASA grant) with Professor Pirouz of Case Western Reserve University, we developed a chemical-mechanical polishing (CMP) technique for removing the subsurface polishing damage prior to epitaxial growth of the single-crystal SiC films.