Study of interfacial point defects by ballistic electron emission microscopy
Study of interfacial point defects by ballistic electron emission microscopy
复制标题
DOI：
10.1103/physrevlett.78.3133
复制
发表时间：
1997-04-21
影响因子：
8.6
通讯作者：
vonKanel, H
中科院分区：
文献类型：
--
作者：
Meyer, T;vonKanel, H
利用弹道电子发射显微镜研究了分子束外延法在CoSi2/Si（111）界面外延的硅化薄膜（类似于30埃）的单个点缺陷。提出了在位错处捕获点缺陷的明确证据。用扩散理论解释了生长过程中退火过程中界面点缺陷的横向分布。
Ballistic electron emission microscopy has been used to study individual point defects, which are located at the CoSi2/Si(111) interface of thin (similar to 30 Angstrom) silicide films sown epitaxially an silicon substrates by molecular beam epitaxy. Clear evidence for trapping of point defects at dislocations is presented. The lateral distribution of the interfacial point defects is explained in terms of diffusion during an annealing step in the growth process.