A photoemission investigation of the SnO2/CdS interface: A front contact interface study of CdS/CdTe solar cells
A photoemission investigation of the SnO2/CdS interface: A front contact interface study of CdS/CdTe solar cells
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DOI：
10.1063/1.352748
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发表时间：
1993-05
影响因子：
3.2
通讯作者：
D. Niles;D. Rioux;H. Höchst
中科院分区：
文献类型：
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作者：
D. Niles;D. Rioux;H. Höchst
CdS/CdTe异质结太阳能电池中常用的前接触是SnO 2。我们对SnO 2/CdS界面的形成和热稳定性进行了软X射线同步辐射光电子能谱研究，试图了解器件加工如何影响该界面。最重要的结果是：（1）CdS和SnO 2不发生化学相互作用，即使在退火到400 °C之后，（3）沉积在多晶SnO 2上的第一个1016 A CdS以逐层模式生长，（3）随后的CdS层聚集，形成拓扑粗糙表面，（4）不发生Sn、Cd和S穿过界面的扩散，（5）将在室温下在SnO 2上生长的CdS薄膜退火至400 °C增强了团聚，并且（6）跨界面的导带最小值的接近重合促进了n型CdS和n型SnO 2之间的欧姆接触。
A frequently used front contact in CdS/CdTe heterojunction solar cells is SnO2. We have performed a soft x‐ray synchrotron radiation photoemission investigation of the formation and thermal stability of the SnO2/CdS interface in an attempt to understand how device processing influences this interface. The most important results are that (1) the CdS and SnO2 do not interact chemically, even after annealing to 400 °C, (3) the first ∼16 A CdS deposited on polycrystalline SnO2 grows in a layer‐by‐layer mode, (3) subsequent CdS layers agglomerate, forming a topologically rough surface, (4) diffusion of Sn, Cd, and S across the interface does not occur, (5) annealing a CdS thin film grown at room temperature on SnO2 to 400 °C enhances the agglomeration, and (6) the near coincidence of the conduction‐band minimum across the interface facilitates ohmic contact between n‐type CdS and n‐type SnO2.