Spin Relaxation Dynamics in Highly Uniform InAs Quantum Dots
Spin Relaxation Dynamics in Highly Uniform InAs Quantum Dots
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DOI：
10.1063/1.1994633
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发表时间：
2004-04
期刊：
影响因子：
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通讯作者：
A. Tackeuchi;Y. Suzuki;M. Murayama;T. Kitamura;T. Kuroda;T. Takagahara;K. Yamaguchi
中科院分区：
文献类型：
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作者：
A. Tackeuchi;Y. Suzuki;M. Murayama;T. Kitamura;T. Kuroda;T. Takagahara;K. Yamaguchi
我们研究了高度均匀自组装InAs量子点中的载流子自旋动力学。高度均匀的量子点使我们能够分别观察基态和第一激发态的自旋动力学，而不受非均匀展宽的干扰。基态和第一激发态的自旋弛豫时间分别为1.0 ns和0.6 ns。我们的测量结果表明载流子密度对自旋弛豫时间的依赖性不存在。测量到的自旋弛豫时间从10 K时的1.1 ns迅速减小到130 K时的200 ps。这种自旋弛豫时间的巨大变化可以用声声子发射的机制来解释。
We have investigated carrier spin dynamics in highly uniform self‐assembled InAs quantum dots. The highly uniform quantum dots allowed us to observe the spin dynamics in the ground state and that in the first excited state separately, without the disturbance of inhomogeneous broadening. The spin relaxation times in the ground state and the first excited state were measured to be 1.0 ns and 0.6 ns, respectively. Our measurements reveal the absence of the carrier density dependence of the spin relaxation time. The measured spin relaxation time decreases rapidly from 1.1 ns at 10 K to 200 ps at 130 K. This large change in the spin relaxation time is well explained in terms of the mechanism of acoustic phonon emission.