Electron emission properties of planar-type electron emission sources based on nanocrystalline silicon
Electron emission properties of planar-type electron emission sources based on nanocrystalline silicon
复制标题
纳米晶硅平面型电子发射源的电子发射特性
DOI：
10.1109/ivnc49440.2020.9203289
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Mimura H.
中科院分区：
文献类型：
--
作者：
Shimawaki H.;Murakami K.;Nagao M.;Mimura H.
研究了基于氧化纳米硅的石墨烯栅平面型电子发射源的电子发射特性。通过真空退火，发射电流提高了一个数量级。
Electron emission properties of planar-type electron emission sources based on oxidized nanocrystalline silicon with graphene-gate electrode were investigated. The emission current was improved by an order of magnitude by vacuum annealing.