Effects of guanidinium addition to CH3NH3PbI3−xClx perovskite photovoltaic devices
Effects of guanidinium addition to CH3NH3PbI3−xClx perovskite photovoltaic devices
复制标题
添加胍对 CH3NH3PbI3−xClx 钙钛矿光伏器件的影响
DOI:
10.2109/jcersj2.18214
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发表时间:
2019
影响因子:
1.1
通讯作者:
T. Oku
中科院分区:
文献类型:
--
作者:
Taku Kishimoto;A. Suzuki;N. Ueoka;T. Oku
CH3NH3PbI31xClx-based photovoltaic devices with guanidinium [C(NH2)3, GA] were fabricated and characterized. The additive effects of guanidinium iodide, formamidinium [CH(NH2)2, FA] iodide, and guanidinium chloride were compared. Short-circuit current densities, open-circuit voltages, series resistances and shunt resistances were improved by the GA addition. The short-circuit current densities were increased by FA addition with GA. The incident photon-to-current conversion efficiency increased, which results from the suppression of pin-holes in perovskite layers by GA addition. The conversion efficiencies were improved by GA addition. X-ray diffraction showed that the lattice constants of the perovskite crystals increased by GA and FA addition, and that the GA substituted partially at the CH3NH3-site. ©2019 The Ceramic Society of Japan. All rights reserved.