Electrical properties of ion beam sputtered and ion assisted SiO2, SiOXNY, and SiNX films on silicon
Electrical properties of ion beam sputtered and ion assisted SiO2, SiOXNY, and SiNX films on silicon
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硅上离子束溅射和离子辅助 SiO2、SiOXNY 和 SiNX 薄膜的电性能
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
J. Colligon
中科院分区：
文献类型：
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作者：
M. Lambrinos;R. Valizadeh;J. Colligon
为了开发用于在低温下形成金属-绝缘体-半导体（MIS）器件的方法，使用不同的溅射和离子辅助参数将薄SiO2、SiOxNy和SiNX膜反应溅射到未加热的硅衬底上。在Ar/O2气氛下，用Ar+离子轰击Si制备SiO2薄膜;在N2/O2和Ar/N2气氛下，用N2+离子轰击Si 3 N4薄膜制备SiOxNy和SiNX薄膜。此外，300 eV的N2+离子的援助期间使用的SiNX膜的制备，以提高膜氮化。100-300 eV的Ar+离子的援助，也被用来在制备SiO2的过程中，调查的绝缘膜溅射过程中的高能离子轰击所造成的电损伤效应。这些薄膜的体和界面的电性能，这是从MIS结构上的电流-电压和高频电容-电压（C-V）测量评估，表明Si的原生氧化物和退火类型在确定最终的F中起着关键作用。
To develop methods for the formation of metal-insulator-semiconductor (MIS) devices at low temperature, thin SiO2, SiOXNY, and SiNX films were reactively sputtered onto nonheated silicon substrates using different sputtering and ion assist parameters. SiO2 was prepared by bombarding Si with Ar+ ions in Ar/O2 ambient whereas SiOXNY and SiNX films were prepared by bombarding Si3N4 with N2+ ions in N2/O2 and Ar/N2 ambients, respectively. In addition, 300 eV N2+ ion assistance was used during preparation of SiNX films to enhance film nitriding. The 100–300 eV Ar+ ion assistance was also used during preparation of SiO2 to investigate the electrical damage effects caused by energetic ion bombardment during sputtering of the insulator film. The bulk and interfacial electrical properties of these films, which were assessed from current–voltage and high-frequency capacitance–voltage (C–V) measurements on MIS structures, indicate that the Si native oxide and type of anneal play a key role in determining the final f...