Proximity-Induced Interfacial Room-Temperature Ferromagnetism in Semiconducting Fe3GeTe2.
Proximity-Induced Interfacial Room-Temperature Ferromagnetism in Semiconducting Fe3GeTe2.
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DOI：
10.1021/acsami.3c09932
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发表时间：
2023-09
影响因子：
9.5
通讯作者：
Qianwen Zhao;Yingmei Zhu;Han-tao Zhang;Baiqing Jiang;Yuan Wang;T. Xie;Kaihua Lou;ChaoChao Xia;Hongxin Yang;C. Bi
中科院分区：
文献类型：
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作者：
Qianwen Zhao;Yingmei Zhu;Han-tao Zhang;Baiqing Jiang;Yuan Wang;T. Xie;Kaihua Lou;ChaoChao Xia;Hongxin Yang;C. Bi
二维铁磁性和磁性半导体的发现极大地丰富了用于构建基于自旋的电子器件的磁性材料家族，但面临着居里温度（Tc）通常远低于室温的公认挑战。目前正在进行电压控制和磁性离子掺杂等许多努力来提高功能温度，其中额外电极或额外磁性离子的参与限制了它们在实际设备中的应用。在这里，我们证明了磁邻近效应是一种强大的效应，但机制难以捉摸，可以在溅射的 Pt 和半导体 Fe3GeTe2 之间的界面处诱发室温铁磁性，而这两种材料在 300 K 时都不会表现出铁磁性。独立的电学和磁化测量、结构分析以及 Ta 的控制样品强调了 Pt 的作用，证实 Tc 高于 400 K 的铁磁性来自 Fe3GeTe2/Pt界面，而不是 Fe 聚集或其他人为效应。此外，与传统的铁磁体/Pt结构相反，Pt层产生的自旋电流在Fe3GeTe2/Pt界面处增强了两倍以上，表明独特的邻近效应在构建高效自旋电子器件中的潜在应用。这些结果可能为创建基于低 Tc 材料的室温功能自旋器件铺平了一条新途径，并为使用非铁磁材料的磁邻近效应提供了明确的证据。
The discoveries of two-dimensional ferromagnetism and magnetic semiconductors highly enrich the magnetic material family for constructing spin-based electronic devices, but with an acknowledged challenge that the Curie temperature (Tc) is usually far below room temperature. Many efforts such as voltage control and magnetic ion doping are currently underway to enhance the functional temperature, in which the involvement of additional electrodes or extra magnetic ions limits their application in practical devices. Here we demonstrate that the magnetic proximity, a robust effect but with elusive mechanisms, can induce room-temperature ferromagnetism at the interface between sputtered Pt and semiconducting Fe3GeTe2, both of which do not show ferromagnetism at 300 K. The independent electrical and magnetization measurements, structure analysis, and control samples with Ta highlighting the role of Pt confirm that the ferromagnetism with the Tc of above 400 K arises from the Fe3GeTe2/Pt interfaces, rather than Fe aggregation or other artificial effects. Moreover, contrary to conventional ferromagnet/Pt structures, the spin current generated by the Pt layer is enhanced more than two times at the Fe3GeTe2/Pt interfaces, indicating the potential applications of the unique proximity effect in building highly efficient spintronic devices. These results may pave a new avenue to create room-temperature functional spin devices based on low-Tc materials and provide clear evidence of magnetic proximity effects by using nonferromagnetic materials.