High quality p-type {111} homoepitaxial diamond thin films produced for diamond based devices
High quality p-type {111} homoepitaxial diamond thin films produced for diamond based devices
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为金刚石基器件生产的高质量 p 型 {111} 同质外延金刚石薄膜
DOI:
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发表时间:
2011
期刊:
影响因子:
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通讯作者:
Andrada Lazea
中科院分区:
文献类型:
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作者:
Moritoshi Yasunaga;他4名;Andrada Lazea