High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric
High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric
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DOI：
10.1109/iedm.2002.1175873
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发表时间：
2002-12
期刊：
影响因子：
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通讯作者：
H. Shang;H. Okorn-Schmidt;K. Chan;M. Copel;J. Ott;P. Kozłowski;S. Steen;S. Cordes;H.-S.P. Wong-H.
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文献类型：
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作者：
H. Shang;H. Okorn-Schmidt;K. Chan;M. Copel;J. Ott;P. Kozłowski;S. Steen;S. Cordes;H.-S.P. Wong-H.
我们报道了在没有硅盖层的体Ge衬底上用Ge氧氮化物和LTO组成的薄栅叠层的Ge p沟道MOSFET。在亚阈值斜率为82 mV/dec的情况下，获得了优良的器件特性(IV和CV)。/SPL sim/40%的空穴迁移率在使用热SiO/sub2/栅电介质的Si控制上获得了增强。据我们所知，这是首次展示了栅介质厚度小于10 nm、亚阈值斜率小于100 mV/dec的Ge MOSFET。
We report Ge p-channel MOSFETs with a thin gate stack of Ge oxynitride and LTO on bulk Ge substrate without a Si cap layer. Excellent device characteristics (IV and CV) are achieved with subthreshold slope 82mV/dec. /spl sim/40% hole mobility enhancement is obtained over the Si control with a thermal SiO/sub 2/ gate dielectric. To our knowledge, this is the first demonstration of Ge MOSFETs with less than 10nm thick gate dielectric and less than 100mV/dec subthreshold slope.