Influence of layer structure on the current-voltage characteristics of Si/SiGe interband tunneling diodes
Influence of layer structure on the current-voltage characteristics of Si/SiGe interband tunneling diodes
复制标题
层结构对Si/SiGe带间隧道二极管电流-电压特性的影响
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
O. Schmidt
中科院分区：
文献类型：
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作者：
E. Khorenko;W. Prost;F. Tegude;M. Stoffel;R. Duschl;M. Dashiell;O. Schmidt
我们系统地研究了Si SiGe带间隧道二极管的直流特性与层结构和器件几何形状的关系。改变本征SiGe层与p掺杂层和n-δ掺杂层之间的Si间隔物厚度XP和XN。在XP= 0 nm，XN= 1 nm的结构下，获得了峰值电流密度为16 kAscincm ~ 2，峰谷电流比为2.7（器件面积为45μ m ~ 2）。所有测量的二极管参数的一个良好的均匀性，实现了整个晶圆面积。
We systematically investigated the DC-characteristics of Si∕SiGe interband tunneling diodes as a function of layer structure and device geometry. The Si spacer thicknesses XP and XN between the intrinsic SiGe layer and the p- and n-δ-doped layers were varied. We obtained a peak current density of 16kA∕cm2 and a peak-to-valley current ratio of 2.7 (with a device area of 45μm2) for a structure with XP=0nm and XN=1nm. A good homogeneity of all measured diode parameters was achieved over the wafer area.