Self-Assembled Molecular-Electronic Films Controlled by Room Temperature Quantum Interference
Self-Assembled Molecular-Electronic Films Controlled by Room Temperature Quantum Interference
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DOI：
10.1016/j.chempr.2018.12.008
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发表时间：
2019-02-14
期刊：
影响因子：
23.5
通讯作者：
Duan, Xiangfeng
中科院分区：
文献类型：
--
作者：
Famili, Marjan;Jia, Chuancheng;Duan, Xiangfeng
如果单分子、室温、量子干涉(QI)效应可以转化为位于平面电极之间的大规模平行分子阵列，QI控制的分子晶体管将成为未来电子设备的构建块。在这里，我们展示了由自组装单分子层(SAM)形成的垂直隧道晶体管的室温QI的明确特征，具有稳定的室温开关操作。由于构造性QI效应，具有两种不同连接性的乙烯基分子形成的结的电导相差34倍，通过控制不同端基的分子-电极界面，电导可以进一步增加到173。场效应控制是使用离子液体门实现的，离子液体门的强大垂直电场穿透石墨烯层并调节自组装膜的能级。由此产生的最低电导自组装膜的室温通断电流比可高达306，比最高电导自组装膜高一个数量级。
If single-molecule, room-temperature, quantum interference (QI) effects could be translated into massively parallel arrays of molecules located between planar electrodes, QI-controlled molecular transistors would become available as building blocks for future electronic devices. Here, we demonstrate unequivocal signatures of room-temperature QI in vertical tunneling transistors, formed from self-assembled monolayers (SAMs), with stable room-temperature switching operations. As a result of constructive QI effects, the conductances of the junctions formed from anthanthrene-based molecules with two different connectivities differ by a factor of 34, which can further increase to 173 by controlling the molecule-electrode interface with different terminal groups. Field-effect control is achieved using an ionic liquid gate, whose strong vertical electric field penetrates through the graphene layer and tunes the energy levels of the SAMs. The resulting room-temperature on-off current ratio of the lowest-conductance SAMs can reach up to 306, about one order of magnitude higher than that of the highest-conductance SAMs.