Non-Volatile Resistive Memory Switching in Pulsed Laser Deposited Rare-Earth Gallate-GdGaO3 Thin Films
Non-Volatile Resistive Memory Switching in Pulsed Laser Deposited Rare-Earth Gallate-GdGaO3 Thin Films
复制标题
DOI：
10.1149/06604.0287ecst
复制
发表时间：
2015-03
期刊：
影响因子：
--
通讯作者：
Y. Sharma;S. Pavunny;J. Scott;R. Katiyar
中科院分区：
文献类型：
--
作者：
Y. Sharma;S. Pavunny;J. Scott;R. Katiyar
研究了脉冲激光沉积非晶GdGaO 3（GGO）薄膜的阻变特性。Pt/GGO/Pt存储器单元在低阻态（LRS）和高阻态（HRS）之间显示出~10的稳定电阻比，并且不重叠切换电压（设置电压，VON ~1.2 × 1.4 V和复位电压，VOFF ~0.6 × 0.8 V），其中每个具有约± 5 × 10%的小变化。为了确认存储单元的可靠性，进行了长达80个设置/重置周期的循环耐久性测试和长达10秒的数据保持检查。用导电丝（热化学）模型解释了Pt/GGO/Pt存储单元中的单极RS机制，发现电阻状态的变化（LRS ParticipHRS）是由于金属Gd原子和氧空位组成的导电丝的形成/破裂而发生的.在LRS和HRS中的电荷传输机制被发现是兼容的欧姆传导和空间电荷限制电流，分别。
Pulsed laser deposited amorphous GdGaO3 (GGO) thin films were investigated to explore their resistive switching (RS) behaviour. Pt/GGO/Pt memory cells showed a stable resistance ratio of ~10 between low resistance state (LRS) and high resistance state (HRS) and non-overlapping switching voltages (set voltage, VON ~1.2˗1.4 V and reset voltage, VOFF ~0.6˗0.8 V) with a small variation of about ± 5˗10% in each. To confirm the reliability of the memory cell, cyclic endurance tests up to 80 set/reset cycles and data retention checks up to 10 seconds were performed. Unipolar RS mechanism in Pt/GGO/Pt memory cell was explained by a conductive filament (thermo-chemical) model, where the change in resistance state (LRS↔HRS) was found to occur due to the formation/rupture of conductive filaments consisting of metallic Gd-atoms and oxygen vacancies. The charge transport mechanisms in LRS and HRS were found to be compatible with Ohmic conduction and space–charge limited current, respectively.