The structure of ultrathin oxide on silicon
The structure of ultrathin oxide on silicon
复制标题
硅上超薄氧化物的结构
DOI：
10.1063/1.91954
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发表时间：
1980
期刊：
影响因子：
--
通讯作者：
J. Mazur
中科院分区：
文献类型：
--
作者：
O. Krivanek;J. Mazur
用高分辨率电子显微镜观察了硅表面30‐A‐厚的氧化物的横截面。氧化物的厚度在5 A以内是均匀的，尽管氧化物的高度波动高达8 A，并且具有大约50 A的周期性。
30‐A‐thick oxide on silicon has been examined in cross section by high‐resolution electron microscopy. The oxide thickness was uniform to within 5 A, even though the oxide undulated up to 8 A in height and with about 50 A periodicity.