Polytype Stability of 4H-SiC Seed Crystal on Solution Growth
Polytype Stability of 4H-SiC Seed Crystal on Solution Growth
复制标题
4H-SiC 晶种在溶液生长中的多型稳定性
DOI：
10.4028/www.scientific.net/msf.679-680.24
复制
发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Y. Takeda
中科院分区：
文献类型：
--
作者：
Alexander;Kazuaki Seki;Shigeta Kozawa;Yuji Yamamoto;T. Ujihara;Y. Takeda
从生长模式的角度研究了溶液生长过程中4H-碳化硅向6H-碳化硅的多型转变过程。主要生长多型体的极性依赖关系类似于升华生长和CVD生长，4H-碳化硅在C面上相对稳定生长。此外，在螺旋生长过程中还发生了多型转变。在4H-碳化硅衬底上，6H-碳化硅向外围扩展，过度生长。相反，没有迹象表明4H-碳化硅在6H-碳化硅上生长。
We investigated the polytype transition process from 4H-SiC to 6H-SiC during solution growth from the viewpoint of growth mode. The polarity dependence of the dominant grown polytype was similar to those of the sublimation growth and the CVD growth that 4H-SiC relatively grew stably on the C-face. Moreover, the polytype transition occurred during spiral growth. The 6H-SiC expanded to periphery overgrowing on the 4H-SiC. In contrast, there is no sign that 4H-SiC grew on 6H-SiC.