Conduction at domain walls in oxide multiferroics
Conduction at domain walls in oxide multiferroics
复制标题
DOI：
10.1038/nmat2373
复制
发表时间：
2009-03-01
期刊：
影响因子：
41.2
通讯作者：
Ramesh, R.
中科院分区：
文献类型：
--
作者：
Seidel, J.;Martin, L. W.;Ramesh, R.
畴壁可能在未来的电子设备中发挥重要作用，因为它们的尺寸很小，而且它们的位置可以控制。在这里，我们报告的观察在铁电畴壁的绝缘多铁性BiFeO3的室温电子电导率。使用导电原子力显微镜，高分辨率透射电子显微镜和第一性原理密度泛函计算相结合的起源和观察到的导电性的性质进行探测。我们的分析表明，电导率与结构驱动的静电势和局部电子结构的变化，这表明在畴壁的带隙减少。此外，我们证明了这种导电纳米级功能的设备应用的潜力。
Domain walls may play an important role in future electronic devices, given their small size as well as the fact that their location can be controlled. Here, we report the observation of room-temperature electronic conductivity at ferroelectric domain walls in the insulating multiferroic BiFeO3. The origin and nature of the observed conductivity are probed using a combination of conductive atomic force microscopy, high-resolution transmission electron microscopy and first-principles density functional computations. Our analyses indicate that the conductivity correlates with structurally driven changes in both the electrostatic potential and the local electronic structure, which shows a decrease in the bandgap at the domain wall. Additionally, we demonstrate the potential for device applications of such conducting nanoscale features.