Doubling the ZT record of TiS2-based thermoelectrics by incorporation of ionized impurity scattering
Doubling the ZT record of TiS2-based thermoelectrics by incorporation of ionized impurity scattering
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通过结合电离杂质散射将 TiS2 基热电材料的 ZT 记录加倍
DOI:
10.1039/c8tc00914g
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发表时间:
2018-09
影响因子:
6.4
通讯作者:
Lu Chunhua
中科院分区:
文献类型:
--
作者:
Wang Yifeng;Pan Lin;Li Chao;Tian Ruoming;Huang Rong;Hu Xiaohui;Chen Changchun;Bao Ningzhong;Koumoto Kunihito;Lu Chunhua
1T-type TiS2 has been recognized as a promising environmentally friendly thermoelectric material with a record ZT of around 0.4 so far. We hereby report the high thermoelectric performance of a series of TiS2–xAgSnSe2 composites with nano-AgSnSe2 as an io
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影响因子:
10.8
作者:
Son, Jae Sung;Choi, Moon Kee;Hyeon, Taeghwan
通讯作者:
Hyeon, Taeghwan
DOI:
10.3390/ma8031124
发表时间:
2015-03-16
期刊:
Materials (Basel, Switzerland)
影响因子:
--
作者:
Jood P;Ohta M
通讯作者:
Ohta M
影响因子:
2.1
作者:
C. Wan;Yifeng Wang;Ning Wang;W. Norimatsu;M. Kusunoki;K. Koumoto
通讯作者:
C. Wan;Yifeng Wang;Ning Wang;W. Norimatsu;M. Kusunoki;K. Koumoto
影响因子:
6.2
作者:
王一峰
通讯作者:
王一峰
影响因子:
19
作者:
Shanyu Wang;Jiong Yang;Lihua Wu;Ping Wei;Wenqing Zhang;Jihui Yang
通讯作者:
Shanyu Wang;Jiong Yang;Lihua Wu;Ping Wei;Wenqing Zhang;Jihui Yang