Updated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC{0001} unipolar devices
Updated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC{0001} unipolar devices
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DOI：
10.7567/1347-4065/aae896
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发表时间：
2018-11
影响因子：
1.5
通讯作者：
T. Kimoto
中科院分区：
文献类型：
--
作者：
T. Kimoto
基于对碰撞电离系数等本征物理性质的最新研究，更新了4H-SiC{0001}单极器件的最小比导通电阻作为击穿电压的函数。穿透(PT)和非穿透(NPT)结构都被考虑，因为PT结构在给定的击穿电压下通常具有较低的导通电阻。在室温下，1kV4H-SiC器件的最小比导通电阻可低至0.20mΩcm~2。给出了比导通电阻与击穿电压关系的解析表达式。
The minimum specific on-resistance of 4H-SiC{0001} unipolar devices as a function of the breakdown voltage was updated based on latest studies on intrinsic physical properties, such as impact ionization coefficients. Both punch-through (PT) and nonpunch-through (NPT) structures were considered, because a PT structure generally gives a lower on-resistance at a given breakdown voltage. The minimum specific on-resistance of 1 kV 4H-SiC devices can be as low as 0.20 mΩ cm2 at room temperature. An analytical expression for the relationship between the specific on-resistance and breakdown voltage is given.