Antiferroelectric phase and tristable-switching in MHPOBC
Antiferroelectric phase and tristable-switching in MHPOBC
复制标题
MHPOBC 中的反铁电相和三稳态开关
DOI：
10.1080/00150199108221581
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发表时间：
1991
期刊：
影响因子：
0.8
通讯作者：
K. Furukawa
中科院分区：
文献类型：
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作者：
H. Takezoe;Ji Lee;A. Chandani;E. Górecka;Y. Ouchi;A. Fukuda;K. Terashima;K. Furukawa
摘要采用热分析、光电测量和锥镜法研究了MHPOBC的反铁电相。结果表明，材料的光学纯度对相变有很大影响。在SmA（顺电）-SmC（铁电）-SmCA（反铁电）的过渡区中的亚相仅在具有高光学纯度的化合物中区分。其中之一是清楚地认识到锥光下的电场以及螺距和旋光度测量。在三稳态开关的阈值行为进行了研究，作为温度和电池厚度的函数。结果发现，在表观倾斜角的滞后往往会消失，随着细胞厚度的增加，而直流阈值是反铁电相的固有属性。直流阈值行为也证实了在一个垂直细胞使用锥镜。
Abstract Antiferroelectric phases of MHPOBC were studied by means of thermal analysis, electrooptic measurements and conoscopy. It was found that the phase transitions are seriously influenced by the optical purity of the material. Subphases in the transition region of SmA (paraelectric) -SmC (ferroelectric)-SmCA(antiferroelectric) are distinguished only in compounds with high optical purity. One of them are clearly recognized by conoscopy under an electric field as well as pitch and optical rotation measurements. Threshold behavior in the tristable switching was also studied as functions of temperature and cell thickness. It was found that the hysteresis in the apparent tilt angle tends to disappear with increasing the cell thickness, while the dc threshold is an inherent property of the antiferroelectric phase. The dc threshold behavior was also confirmed in a homeotropic cell using conoscopy.
Y. Ouchi、H. Takezoe 和 A. Fukuda：铁电体。
DOI：
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