High-Q plasmonic graphene absorbers for electrical switching and optical detection
High-Q plasmonic graphene absorbers for electrical switching and optical detection
复制标题
用于电开关和光学检测的高 Q 等离子体石墨烯吸收体
DOI：
10.1016/j.carbon.2020.05.046
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发表时间：
2020-09-30
期刊：
影响因子：
10.9
通讯作者：
Chen, Jing
中科院分区：
文献类型：
--
作者：
Liu, Zhengqi;Zhou, Jin;Chen, Jing
在这项工作中，我们报告了一个深入的理论研究，实现多个超尖锐和近单位吸收腔使能石墨烯吸收体。等离子体诱发的磁共振，即，通过一维金属倾斜狭缝阵列有效地激发和定位磁等离子体。狭缝使等离子体激元场在有限的空间腔中高度集中，同时增强了石墨烯与场的耦合，导致了多波段高品质（Q）因子（190）超尖锐完美吸收的出现。尽管石墨烯-狭缝相互作用面积仅为结构尺寸的17.7%，但最大吸收效率达到99.8%。在近红外范围内，当石墨烯的费米能被操纵0.03 eV的微小值时，实现了82%的大光谱强度变化，这直接引入了操作"开"和"关"状态之间的可视切换过程。光学传感灵敏度也高达1276 nm/RIU，FOM因子达到106。在用于温度检测的应用中，分辨率极限可以低至3 × 10（-3）℃（K），这表明是理想的温度检测器。此外，等离子体石墨烯吸收体的偏振可调和角度不敏感特性可以进一步促进有源光电器件的巨大应用。(C)2020爱思唯尔有限公司保留所有权利。
In this work, we report an intensive theoretical study on the achieving of multiple ultra-sharp and near-unity absorption in a cavity enabled graphene absorber. The plasmonic-induced magnetic resonance, i.e., magnetic plasmon is excited and localized efficiently via the one-dimensional metallic oblique slit array. The slit concentrates highly for the plasmonic field in a limited spatial cavity and simultaneously intensifies the graphene-field coupling, which leads to the emergency of the multi-band high-quality (Q) factor (190) ultra-sharp perfect absorption. Although the graphene-slit interaction area is just 17.7% of the structural size, the maximal absorption efficiency reaches 99.8%. In the near-infrared range, a large spectral intensity change of 82% is achieved when the graphene's Fermi energy is manipulated by a slight value of 0.03 eV, which directly introduces a viewable switching process between the operation "on" and "off" states. The optical sensing sensitivity is also up to 1276 nm/RIU and the FOM factor reaches 106. During the application for temperature detecting, the resolution limit can be as down as 3 x 10(-3) degrees C (K), suggesting a desirable temperature detector. Moreover, polarization-adjustable and angle-insensitive properties for the plasmonic graphene absorber could further promote enormous applications for the active optoelectronic devices. (C) 2020 Elsevier Ltd. All rights reserved.