Precise evaluation of GaAs/AlGaAs 129 kΩ and 1 MΩ quantum Hall array devices for a quantum Wheatstone bridge
Precise evaluation of GaAs/AlGaAs 129 kΩ and 1 MΩ quantum Hall array devices for a quantum Wheatstone bridge
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用于量子惠斯通电桥的 GaAs/AlGaAs 129 kΩ 和 1 MΩ 量子霍尔阵列器件的精确评估
DOI：
10.1109/cpem49742.2020.9191735
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
N.-H. Kaneko
中科院分区：
文献类型：
--
作者：
T. Oe;A. R. Panna;R. E. Elmquist;D. G. Jarrett;Y. Fukuyama;N.-H. Kaneko
利用GaAs/AlGaAs异质结制备了129 kΩ和1 MΩ量子霍尔阵列器件，并利用NIST的量子霍尔电阻标准，通过稳定的标准电阻，精确地测量了量子霍尔阵列器件的量子霍尔电阻平台，其精度优于5×10- 8。这些更高的量化值已经吸引了工业界对诸如精确的小电功率（小电流）测量、漏电流和电绝缘测量等应用的兴趣。对于这些量子霍尔阵列器件，通过简单的低温量子惠斯通电桥技术，对1 MΩ电阻标准的测量精度将优于1×10- 7。这些器件也可以用于量子分压器。
We have fabricated 129 kΩ and 1 MΩ quantum Hall array devices using GaAs/AlGaAs heterostructures and their quantized Hall resistance plateaus were precisely evaluated with an accuracy of better than 5×10-8based on NIST's quantized Hall resistance standard via stable standard resistors. These higher quantized values have been attracting industrial interests for applications such as precise small electric power (small current) measurements, leakage current, and electrical insulation measurements. Given these quantum Hall array devices, an accuracy of better than 1×10-7for 1 MΩ resistance standard measurements will be achieved, through a simple cryogenic quantum Wheatstone bridge technique. These devices could also be utilized for a quantum voltage divider.