Ferromagnetic nanoclusters hybridized in Mn-incorporated GaInAs layers during metal–organic vapour phase epitaxial growth on InP layers under low growth temperature conditions
Ferromagnetic nanoclusters hybridized in Mn-incorporated GaInAs layers during metal–organic vapour phase epitaxial growth on InP layers under low growth temperature conditions
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低生长温度条件下 InP 层金属有机气相外延生长过程中，铁磁纳米团簇在掺锰 GaInAs 层中杂化
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发表时间：
2005
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影响因子：
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通讯作者：
A. Kuramata
中科院分区：
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作者：
S. Hara;A. Kuramata
我们证明了在低于450°C的低生长温度条件下，在InP（100）衬底上通过金属有机气相外延生长的mn掺杂GaInAs层中成功形成铁磁性纳米团簇。我们发现，在440°C生长的mn - GaInAs层表面附近形成了具有nias型六方晶体结构的MnAs纳米团簇，其铁磁特性高达约305 K的相对高温。将未掺杂的InP层沉积在mn掺杂的GaInAs层上，在InP层中形成了具有正交立方晶体结构的MnP纳米团簇，其中掺入了7%的砷。MnP纳米团簇的样品在305k左右表现出强的铁磁耦合，而MnP本体化合物的居里温度为291k。能量色散x射线能谱（EDS）表明，MnP纳米团簇周围InP和GaInAs层中的Mn浓度几乎可以忽略不计。在450°C的低温条件下，在GaAs（100）衬底上生长的mn掺杂GaAs层中也形成了MnAs纳米簇。从与样品生长温度相关的磁性表征结果来看，我们发现在低于450°C的温度下生长的所有mn掺杂GaAs层都表现出铁磁性行为。
We demonstrate the successful formation of ferromagnetic nanoclusters in Mn-incorporated GaInAs layers grown by metal–organic vapour phase epitaxy on InP(100) substrates under low growth temperature conditions below 450 °C. We find that MnAs nanoclusters with NiAs-type hexagonal crystallographic structures, which show ferromagnetic characteristics up to a relatively high temperature of about 305 K, are formed near the layer surfaces of Mn-incorporated GaInAs layers grown at 440 °C. After deposition of undoped InP layers on Mn-incorporated GaInAs layers, MnP nanoclusters with orthorhombic cubic crystallographic structures, in which 7% arsenic is incorporated, are formed in InP layers. The samples with MnP nanoclusters show strong ferromagnetic coupling up to about 305 K, although the Curie temperature of MnP bulk compounds is 291 K. Energy dispersive x-ray spectroscopy (EDS) indicates that Mn concentrations in InP and GaInAs layers surrounding MnP nanoclusters are almost negligible. MnAs nanoclusters are also formed in Mn-incorporated GaAs layers grown under low growth temperature conditions of 450 °C on GaAs(100) substrates. From the results of magnetic characterizations with respect to growth temperatures of the samples, we found that all the Mn-incorporated GaAs layers grown at temperatures below 450 °C showed ferromagnetic behaviour.