Defect Formation During Crystal Growth from the Melt
Defect Formation During Crystal Growth from the Melt
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DOI：
10.1007/978-3-540-74761-1_6
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
P. Rudolph
中科院分区：
文献类型：
--
作者：
P. Rudolph
本章概述了从熔体中生长大块晶体过程中的重要缺陷类型及其起源。主要的热力学和动力学原理被认为是驱动力的缺陷产生和合并，分别。文中给出了模拟结果和现场实际控制结果。重点是半导体晶体生长，因为它是从这类材料，大多数已经首先学习，所产生的知识，然后已被应用到其他类别的材料。治疗开始与零维缺陷类型，即，原生和非原生点缺陷。它们的产生和纳入机制进行了讨论。微观和宏观偏析现象-条纹和成分过冷的影响-被添加。考虑了利用非保守生长原理控制掺杂。一维结构扰动-位错及其图案-将在下面讨论。集体相互作用，如细胞结构和聚束，高温位错动力学的作用。在另一节中，第二相沉淀和夹杂物捕获进行了讨论。强调了原位化学计量控制的重要性。最后讨论了两种特殊的缺陷类型--小面缺陷和孪晶缺陷。首先，面之间的相互作用和不均匀的掺杂剂掺入，然后孪生的主要因素，包括熔体结构概述。
This chapter gives an overview of the important defect types and their origins during bulk crystal growth from the melt. The main thermodynamic and kinetic principles are considered as driving forces of defect generation and incorporation, respectively. Results of modeling and practical in situ control are presented. Strong emphasis is given to semiconductor crystal growth since it is from this class of materials that most has been first learned, the resulting knowledge then having been applied to other classes of material.The treatment starts with zero-dimensional defect types, i.e., native and extrinsic point defects. Their generation and incorporation mechanisms are discussed. Micro- and macrosegregation phenomena – striations and the effect of constitutional supercooling – are added. The control of dopants by using the nonconservative growth principle is considered. One-dimensional structural disturbances – dislocations and their patterning – are discussed next. The role of high-temperature dislocation dynamics for collective interactions, such as cell structuring and bunching, is shown. In a further section second-phase precipitation and inclusion trapping are discussed. The importance of in situ stoichiometry control is underlined. Finally two special defect types are treated – faceting and twinning. First the interplay between facets and inhomogeneous dopant incorporation, then main factors of twinning including melt structure are outlined.