Towards low loss non-volatile phase change materials in mid index waveguides
Towards low loss non-volatile phase change materials in mid index waveguides
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DOI：
10.1088/2634-4386/ac156e
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发表时间：
2021-09-01
期刊：
影响因子：
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通讯作者：
Gardes, Frederic Y.
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文献类型：
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作者：
Faneca, Joaquin;Zeimpekis, Ioannis;Gardes, Frederic Y.
光子集成电路目前使用平台固有的热光和电光效应来实现动态功能，例如开关、调制和其他处理。目前，有一个驱动器，以实现现场可编程光子电路，这是一个需要，只有放大新的神经形态和量子计算应用。最有前途的非易失性光子器件采用相变材料，如GST和GSST，它们起源于电子存储器。然而，在光学领域中，这些化合物引入了显著的损耗，潜在地阻止了大量应用。在这里，我们评估使用两个新引入的低损耗相变材料，Sb 2S 3和Sb 2Se 3，在氮化硅光子平台上的未来实现在神经形态计算。我们的研究重点是在O和C波段的马赫-曾德尔干涉仪，以证明系统的性能。我们的测量结果表明，插入损耗低于0.04 dB μ m-1的Sb 2S 3和低于0.09 dB μ m-1的Sb 2Se 3包层器件的非晶和结晶相。Sb 2S 3在SiNx上的有效折射率对比度被测量为在1310 nm下为0.05并且在1550 nm下为0.02，而Sb 2Se 3在1310 nm下为0.03并且在1550 nm下为0.05，突出了集成器件的性能。
Photonic integrated circuits currently use platform intrinsic thermo-optic and electro-optic effects to implement dynamic functions such as switching, modulation and other processing. Currently, there is a drive to implement field programmable photonic circuits, a need which is only magnified by new neuromorphic and quantum computing applications. The most promising non-volatile photonic components employ phase change materials such as GST and GSST, which had their origin in electronic memory. However, in the optical domain, these compounds introduce significant losses potentially preventing a large number of applications. Here, we evaluate the use of two newly introduced low loss phase change materials, Sb2S3 and Sb2Se3, on a silicon nitride photonic platform for future implementation in neuromorphic computing. We focus the study on Mach-Zehnder interferometers that operate at the O and C bands to demonstrate the performance of the system. Our measurements show an insertion loss below 0.04 dB & mu;m-1 for Sb2S3 and lower than 0.09 dB & mu;m-1 for Sb2Se3 cladded devices for both amorphous and crystalline phases. The effective refractive index contrast for Sb2S3 on SiNx was measured to be 0.05 at 1310 nm and 0.02 at 1550 nm, whereas for Sb2Se3, it was 0.03 at 1310 nm and 0.05 at 1550 nm highlighting the performance of the integrated device.