Uncooled silicon germanium oxide (SixGeyO1-x-y) thin films for infrared detection
Uncooled silicon germanium oxide (SixGeyO1-x-y) thin films for infrared detection
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用于红外检测的非冷却硅锗氧化物 (SixGeyO1-x-y) 薄膜
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
M. Almasri
中科院分区：
文献类型：
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作者：
M. L. Hai;M. Hesan;J. Lin;Q. Cheng;M. Jalal;A. Syllaios;S. Ajmera;M. Almasri
本文对氧浓度低于10%的氧化硅(SixGeyO1-x-y)薄膜进行了详细的表征。结果表明，采用不同成分的Si0.054Ge0.877O0.069薄膜可以获得较高的Tcr和较低的对应电阻率，例如Si0.054Ge0.877O0.069薄膜的Tcr和电阻率分别为-3.516/K和629Ω-cm。室温下沉积的Si0.136Ge0.838O0.026薄膜的最低测量电阻率为-119.6Ω-cm，对应的TcR为-2.202%/K，而室温沉积的Si0.167Ge0.762O0.071薄膜的最高TcR为-5.017%/K，对应的室温电阻率为39.1×10~3Ω-cm。从Arrhenius曲线的斜率计算的活化能(Ea)在0.1232 eV到0.3788 eV之间变化。X-射线衍射研究表明，薄膜为非晶态，但在氧浓度不变的情况下，薄膜不依赖于不同的硅。噪声研究表明，这些薄膜表现出相对较高的1/f。
This paper presents a detailed characterization of silicon germanium oxide (SixGeyO1-x-y) thin films with an Oxygen concentration below 10%. The results demonstrated that a high TCR and a low corresponding resistivity can be achieved using various compositions, for example, Si0.054Ge0.877O0.069 film has achieved a TCR and a resistivity of -3.516/K, and 629 Ω-cm, respectively. The lowest measured resistivity and the corresponding TCR were 119.6 Ω-cm and -2.202 %/K respectively, using Si0.136Ge0.838O0.026 for film deposited at room temperature, whereas the highest achieved TCR and the corresponding resistivity at room temperature were -5.017 %/K, and 39.1×103 Ω-cm, respectively, using Si0.167Ge0.762O0.071 for films deposited at room temperature. The calculated activation energy (Ea) from the slope of Arrhenius plots were varied between 0.1232 eV to 0.3788 eV. The X-ray diffraction study demonstrated that the films are amorphous but did not show any dependence on varying silicon at fixed oxygen concentration. The noise study demonstrated that these films exhibit relatively high 1/f.