PBTI-Associated High-Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High- $k$ Dielectrics
PBTI-Associated High-Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High- $k$ Dielectrics
复制标题
具有金属栅极/高 $k$ 电介质的 nMOSFET 的 PBTI 相关高温热载流子退化
DOI：
10.1109/led.2008.918257
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发表时间：
2008
影响因子：
4.9
通讯作者：
Y. Jeong
中科院分区：
文献类型：
--
作者：
Kyong;C. Kang;Ooksang Yoo;R. Choi;B. Lee;J.C. Lee;H. Lee;Y. Jeong
由于金属栅/高k器件中物理电介质厚度的增加和栅极泄漏的减少，沟道热载流子（HC）引起的退化变得比正偏置温度应力更显着。在金属栅/高k器件的分析中，发现加速沟道HC会引起永久性界面损伤。此外，HC应力引起的整体阈值电压漂移在较高的温度下增强，这是由于与正偏置温度不稳定性。因此，高温HC应力已成为短沟道金属栅/高k MOSFET的主要退化因素。
Due to the increased physical dielectric thickness and reduced gate leakage in metal-gate/high-k devices, degradation caused by channel hot carriers (HCs) becomes more significant than positive bias temperature stress. In an analysis of metal-gate/high-k devices, accelerated channel HCs were found to induce permanent interface damage. Moreover, the overall threshold voltage shifts caused by HC stress were enhanced at higher temperatures, which is due to an association with positive bias temperature instability. Therefore, high-temperature HC stress has emerged as a dominant degradation factor in short-channel nMOSFETs with metal-gate/high-k dielectrics.