Double Gaussian distribution of barrier heights and self-powered infrared photoresponse of InN/AlN/Si (111) heterostructure
Double Gaussian distribution of barrier heights and self-powered infrared photoresponse of InN/AlN/Si (111) heterostructure
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DOI：
10.1063/1.5100066
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发表时间：
2019-07
影响因子：
3.2
通讯作者：
Arun Malla Chowdhury;R. Pant;B. Roul;D. Singh;K. Nanda;S. .. Krupanidhi
中科院分区：
文献类型：
--
作者：
Arun Malla Chowdhury;R. Pant;B. Roul;D. Singh;K. Nanda;S. .. Krupanidhi
采用等离子体辅助分子束外延技术在AlN/n-Si（111）衬底上生长了InN外延层。利用红外激光（λ = 1550 nm，功率密度≥ 106.2mA/cm 2）实现了自供电的光电探测，在InN/AlN/n-Si（111）基半导体-绝缘体-半导体（SIS）界面处的光响应率为3.36 μA/W，响应时间为毫秒。此外，为了阐明SIS界面的垂直电输运性质，在100-400 K范围内研究了低温电行为。实验研究表明，随着温度的升高，势垒高度异常增加，理想因子降低，表明异质结的势垒高度不均匀。这种不均匀性的行为已成功地解释的基础上的电子发射理论，假设在异质结界面的势垒高度的双高斯分布的存在。此外，SIS器件结构表现出平均势垒高度（φ B 0）分别为1.11和0.63 eV，表明界面处存在缺陷态和不均匀性，利用等离子体辅助分子束外延技术在AlN/n-Si（111）衬底上生长了InN外延层衬底利用红外激光（λ = 1550 nm，功率密度≥ 106.2mA/cm 2）实现了自供电的光电探测，在InN/AlN/n-Si（111）基半导体-绝缘体-半导体（SIS）界面处的光响应率为3.36 μA/W，响应时间为毫秒。此外，为了阐明SIS界面的垂直电输运性质，在100-400 K范围内研究了低温电行为。实验研究表明，随着温度的升高，势垒高度异常增加，理想因子降低，表明异质结的势垒高度不均匀。这种不均匀性的行为已成功地解释的基础上的电子发射理论，假设存在一个双高斯分布的势垒高度的异质结…
InN epilayer has been grown by plasma-assisted molecular beam epitaxy on the AlN/n-Si (111) substrate. The self-powered photodetection has been carried out with an infra-red (IR) laser ( λ = 1550 nm, power density ∼ 106 .2 mA / c m 2), where a photoresponsivity was observed to be 3.36 μA/W with response times in milliseconds from the InN/AlN/n-Si (111)-based semiconductor–insulator–semiconductor (SIS) interface. Furthermore, to elucidate the vertical electrical transport properties of the SIS interface, low-temperature electrical behavior has been investigated over a range of 100–400 K. Experimental studies revealed an abnormal increase in the barrier height and a decrease in the ideality factor with increasing temperature, suggesting inhomogeneous barrier heights across the heterojunctions. Such inhomogeneity behaviors have been successfully explained on the basis of thermionic emission theory, assuming the existence of a double Gaussian distribution of barrier heights at the heterostructure interface. Moreover, the SIS device structure exhibits mean barrier heights ( φ ¯ b 0 ) of 1.11 and 0.63 eV, respectively, in two temperature regimes, indicating the presence of defect states and inhomogeneity at the interface, which is supported by the nonlinear behavior of the photocurrent with the power density.InN epilayer has been grown by plasma-assisted molecular beam epitaxy on the AlN/n-Si (111) substrate. The self-powered photodetection has been carried out with an infra-red (IR) laser ( λ = 1550 nm, power density ∼ 106 .2 mA / c m 2), where a photoresponsivity was observed to be 3.36 μA/W with response times in milliseconds from the InN/AlN/n-Si (111)-based semiconductor–insulator–semiconductor (SIS) interface. Furthermore, to elucidate the vertical electrical transport properties of the SIS interface, low-temperature electrical behavior has been investigated over a range of 100–400 K. Experimental studies revealed an abnormal increase in the barrier height and a decrease in the ideality factor with increasing temperature, suggesting inhomogeneous barrier heights across the heterojunctions. Such inhomogeneity behaviors have been successfully explained on the basis of thermionic emission theory, assuming the existence of a double Gaussian distribution of barrier heights at the heterostructure...