Experimental observation on a temperature-induced decoupling between the surface states in topological insulator nanoplates Bi2−0.15(TeSe)3+0.15
Experimental observation on a temperature-induced decoupling between the surface states in topological insulator nanoplates Bi2−0.15(TeSe)3+0.15
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DOI：
10.1007/s00339-016-9888-y
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发表时间：
2016-03
期刊：
影响因子：
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通讯作者：
Haoran Lu;Kangkang Zhang;Haiyang Pan;Junwen Zeng;Taishi Chen;F. Song;Xuefeng Wang;F. Miao;Rong Zhang
中科院分区：
文献类型：
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作者：
Haoran Lu;Kangkang Zhang;Haiyang Pan;Junwen Zeng;Taishi Chen;F. Song;Xuefeng Wang;F. Miao;Rong Zhang
我们报告了拓扑绝缘体Bi 2 −0.15（TeSe）3+ 0.15纳米片中表面态之间的温度诱导量子退耦，通过弱反局域化测量证明了这一点。样品采用无催化剂气固法制备，尺寸为10 μm，厚度为20 nm。从弱反定域中提取通道指示剂，其随温度的升高呈现从0.5到1的转变。这揭示了两个表面态之间的相干退耦，在此期间，退相长度达到板的厚度。体介导的界面耦合模型解释的过渡。
We report on the temperature-induced quantum decoupling between the surface states, demonstrated by weak antilocalization measurements, in the topological insulator Bi2−0.15(TeSe)3+0.15nanoplates. The samples are prepared by a catalyst-free vapor–solid process with the dimension of 10 μm and the thickness of 20 nm. The channel indicator is extracted from the weak antilocalization, which presents a transition from 0.5 to 1 with the increasing temperature. This reveals the coherent decoupling between the two surface states, during which the dephasing length reaches the plate thickness. A bulk-mediated intersurface coupling model interprets the transition.