High-order harmonic generation in semiconductors driven at near- and mid-infrared wavelengths
High-order harmonic generation in semiconductors driven at near- and mid-infrared wavelengths
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DOI：
10.1103/physrevb.106.075202
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发表时间：
2021-09
影响因子：
3.7
通讯作者：
D. Freeman;A. Kheifets;S. Yamada;A. Yamada;K. Yabana
中科院分区：
文献类型：
--
作者：
D. Freeman;A. Kheifets;S. Yamada;A. Yamada;K. Yabana
研究了近红外和中红外激光脉冲作用下晶体硅和金刚石中高次谐波的产生。我们采用含时密度泛函理论，在单胞几何中求解含时Kohn-Sham方程。我们证明，清晰和干净的HHG光谱可以产生仔细选择的脉冲持续时间。此外，我们模拟退相效应在一个大的硅超电池通过位移的原子位置制备的分子动力学模拟。我们将我们的结果与Floss等人[Phys. Rev. A 97，011401（R）（2018）]在800 nm处对金刚石的先前计算和Tancogne-Dejean等人[Phys. Rev. Lett. 118，087403（2017）]在3000 nm下在Si上。
We study high order harmonics generation (HHG) in crystalline silicon and diamond subjected to near and mid-infrared laser pulses. We employ time-dependent density functional theory and solve the time-dependent Kohn-Sham equation in the single-cell geometry. We demonstrate that clear and clean HHG spectra can be generated with careful selection of the pulse duration. In addition, we simulate dephasing effects in a large silicon super-cell through a displacement of atomic positions prepared by a molecular dynamics simulation. We compare our results with the previous calculations by Floss et al. [Phys. Rev. A 97 , 011401(R) (2018)] on Diamond at 800 nm and by Tancogne-Dejean et al. [Phys. Rev. Lett. 118 , 087403 (2017)] on Si at 3000 nm.