Influence of Dislocations to the Diamond SBD Reverse Characteristics
Influence of Dislocations to the Diamond SBD Reverse Characteristics
复制标题
位错对金刚石 SBD 反向特性的影响
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
S. Shikata
中科院分区：
文献类型：
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作者：
Nao Akashi;A. Seki;Hiroaki Saito;F. Kawai;S. Shikata
关于位错对器件特性的影响已经进行了一些研究，但大多数研究局限于以高压高温绝缘材料为衬底的准垂直结构。在本研究中，我们研究了位错对p+HPHT衬底上垂直结构SBD器件的影响。在特定的位错区域选择性地制作了SBD。在穿丝位错区制作的SBD表明位错对器件特性有致命的影响。
Several studies have been carried out regarding the influence of dislocations on device characteristics; however, most of them had been limited to pseudo-vertical structures using high pressure high temperature (HPHT) insulating material as the substrate. In this study, we have investigated the influence of dislocations to the devices using vertical structure SBD on p+ HPHT substrate. SBDs were selectively fabricated on specific dislocation areas. The SBD fabricated on the threading dislocation area indicated fatal influence of the dislocation on the device characteristics.