Optical gain in GaAsBi/GaAs quantum well diode lasers.
Optical gain in GaAsBi/GaAs quantum well diode lasers.
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DOI：
10.1038/srep28863
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发表时间：
2016-07-01
影响因子：
4.6
通讯作者：
Sweeney SJ
中科院分区：
文献类型：
--
作者：
Marko IP;Broderick CA;Jin S;Ludewig P;Stolz W;Volz K;Rorison JM;O'Reilly EP;Sweeney SJ
电泵浦GaAsBi/GaAs量子阱激光器是一种很有前途的新型近红外器件，利用GaAsBi合金的特殊能带结构特性，可以抑制影响器件性能的主要耗能俄歇复合和价带间吸收损耗机制。抑制这些损失机制有望导致电信激光器的高效，非制冷操作，使GaAsBi系统成为下一代半导体激光器发展的有力候选者。在这份报告中，我们提出了第一个实验测量的光学增益，吸收和自发辐射光谱的GaAsBi基量子阱激光器结构。我们确定内部光学损耗为10-15 cm−1，峰值模式增益为24 cm−1，对应于在2 kA cm−2的电流密度下约1500 cm−1的材料增益。为了补充实验研究，自发辐射和光学增益谱的理论分析，提出了一个模型的基础上的12带k.p的GaAsBi合金的哈密顿量。我们的理论计算结果与实验数据在很好的定量协议，并一起提供了一个强大的预测能力，用于设计和优化的高效率激光器在红外。
Electrically pumped GaAsBi/GaAs quantum well lasers are a promising new class of near-infrared devices where, by use of the unusual band structure properties of GaAsBi alloys, it is possible to suppress the dominant energy-consuming Auger recombination and inter-valence band absorption loss mechanisms, which greatly impact upon the device performance. Suppression of these loss mechanisms promises to lead to highly efficient, uncooled operation of telecommunications lasers, making GaAsBi system a strong candidate for the development of next-generation semiconductor lasers. In this report we present the first experimentally measured optical gain, absorption and spontaneous emission spectra for GaAsBi-based quantum well laser structures. We determine internal optical losses of 10–15 cm−1 and a peak modal gain of 24 cm−1, corresponding to a material gain of approximately 1500 cm−1 at a current density of 2 kA cm−2. To complement the experimental studies, a theoretical analysis of the spontaneous emission and optical gain spectra is presented, using a model based upon a 12-band k.p Hamiltonian for GaAsBi alloys. The results of our theoretical calculations are in excellent quantitative agreement with the experimental data, and together provide a powerful predictive capability for use in the design and optimisation of high efficiency lasers in the infrared.