Observation of random telegraph signals: Anomalous nature of defects at the Si/SiO2 interface
Observation of random telegraph signals: Anomalous nature of defects at the Si/SiO2 interface
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随机电报信号的观察：Si/SiO2 界面缺陷的异常性质
DOI：
10.1063/1.347116
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发表时间：
1990
期刊：
影响因子：
--
通讯作者：
K. Natori
中科院分区：
文献类型：
--
作者：
A. Ohata;A. Toriumi;M. Iwase;K. Natori
从相对电流变化和相关开关的角度研究了小尺寸金属氧化物半导体场效应晶体管(MOSFET)中具有离散电平的电流波动，称为随机电报信号(RTS)。即使在室温下，也观察到了高达30%的相对电流变化。在统计和温度依赖性方面，它的行为类似于正常的小RTS。在20-μm沟道宽度的MOSFET中也发现了RTS。这些结果要求除了简单的库仑散射或数波动之外，还需要另一种机制来解释RTS。强调了Si/SiO_2界面缺陷之间的相互作用对于理解相关的RTS是必要的。通过假设相互作用缺陷的模型计算，合理地再现了实验结果。还指出，在低亚微米器件中，由电应力产生的新的RTS可能是一个严重的问题。
Current fluctuations with discrete levels, which are called random telegraph signals (RTSs), have been studied in small size metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) from both viewpoints of relative current change and of correlated switchings. A large relative current change of as much as 30% has been observed, even at room temperature. It behaves similarly as normal small RTSs in terms of statistics and temperature dependence. RTSs have been found also in 20‐μm channel width MOSFETs. These results require another mechanism to explain RTSs in addition to simple Coulomb scattering or number fluctuation. It is emphasized that an interaction between defects at the Si/SiO2 interface is necessary to understand the correlated RTSs. The experimental results are reasonably reproduced by a model calculation assuming interacting defects. It is also pointed out that new RTSs generated by electrical stress might be a serious concern in lower submicron devices.