Ferroelectric memories: a possible answer to the hardened nonvolatile question
Ferroelectric memories: a possible answer to the hardened nonvolatile question
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DOI：
10.1109/23.25481
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发表时间：
1988-12
影响因子：
1.8
通讯作者：
G. C. Messenger;F. Coppage
中科院分区：
文献类型：
--
作者：
G. C. Messenger;F. Coppage
铁电存储器单元使用与基本上非易失性和抗辐射的半导体VLSI制造技术兼容的工艺制造。存储器可以使用几种技术为战略系统制作NDRO（非破坏性读出），最实用的是结合EDAC软件的快速读取/恢复。这种存储器可以取代电镀线，并且在成本、重量、尺寸、功率和速度方面具有实质性的优势。它提供了一个实际的成本竞争力的解决方案，需要非易失性RAM在所有硬化战术，航空电子和空间系统。>
Ferroelectric memory cells were fabricated using a process compatible with semiconductor VLSI manufacturing techniques that are basically nonvolatile and radiation-hard. The memory can be made NDRO (nondestructive readout) for strategic systems using several techniques, the most practical being a rapid read/restore in combination with EDAC software. This memory can replace plated wire and will have substantial advantages in cost, weight, size, power, and speed. It provides a practical cost-competitive solution to the need for nonvolatile RAM in all hardened tactical, avionic, and space systems. >