Electric-Field Screening in Atomically Thin Layers of MoS2: the Role of Interlayer Coupling

Electric-Field Screening in Atomically Thin Layers of MoS2: the Role of Interlayer Coupling
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DOI:
10.1002/adma.201203731
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发表时间:
2013-02-13
期刊:
影响因子:
29.4
通讯作者:
Rubio-Bollinger, Gabino
Rubio-Bollinger, Gabino
中科院分区:
材料科学1区
文献类型:
--
作者:
Castellanos-Gomez, Andres;Cappelluti, Emmanuele;Rubio-Bollinger, Gabino

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研究了单层和多层二硫化钼的静电筛分。静电力显微镜用于探测基片中电荷杂质产生的电场,并被MoS2片不完全屏蔽。采用非线性Thomas-Fermi理论解释实验结果,证明了层间耦合在二硫化钼筛选中的重要作用。
The electrostatic screening in single and few-layer MoS2 sheets is studied. Electrostatic force microscopy is used to probe the electric field generated by charge impurities in the substrate and incompletely screened by MoS2 sheets. A non-linear Thomas-Fermi theory is employed to interpret the experimental results, demonstrating the important role of the interlayer coupling in the screening of MoS2.