Defect-mediated room temperature ferromagnetism in vanadium dioxide thin films
Defect-mediated room temperature ferromagnetism in vanadium dioxide thin films
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DOI：
10.1063/1.3224202
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发表时间：
2009-09
影响因子：
4
通讯作者：
Tsung-han Yang;S. Nori;Honghui Zhou;J. Narayan
中科院分区：
文献类型：
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作者：
Tsung-han Yang;S. Nori;Honghui Zhou;J. Narayan
采用脉冲激光沉积技术在c面蓝宝石（0001）衬底上外延生长了高质量的非掺杂氧化钒（VO 2）薄膜。所生长的薄膜具有优异的结构和传输性能，而不需要进一步的退火处理这些缺氧氧化物薄膜。外延生长已经通过域匹配外延实现，其中在膜-衬底界面上发生整数倍的平面的匹配。在10-360 K范围内的不同温度下研究的氧化钒（VO 2）薄膜的磁性显示出显着的磁滞以及饱和的磁矩。铁磁性质的起源与估计居里温度高于500 K的情况下，在VO 2薄膜中的磁性杂质的X-射线光电子能谱，X-射线衍射，和透射电子显微镜测定进行了讨论。
High quality epitaxial undoped vanadium oxide (VO2) thin films on c-plane sapphire (0001) substrate have been grown using pulsed laser deposition technique. The as-grown films exhibited excellent structural and transport properties without requiring further annealing treatments for these oxygen-deficient oxide films. The epitaxial growth has been achieved via domain matching epitaxy, where matching of integral multiples of planes occurs across the film-substrate interface. The magnetic properties of vanadium oxide (VO2) films investigated at different temperatures in the range of 10–360 K showed significant magnetic hysteresis as well as saturation of the magnetic moment. The origin of ferromagnetic properties with an estimated Curie temperature above 500 K is discussed in the absence of magnetic impurities in VO2 thin films as determined by x-ray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy.