Metal-ferroelectric-metal heterostructures with Schottky contacts. I. Influence of the ferroelectric properties
Metal-ferroelectric-metal heterostructures with Schottky contacts. I. Influence of the ferroelectric properties
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DOI：
10.1063/1.2148622
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发表时间：
2005-12-15
影响因子：
3.2
通讯作者：
Alexe, M
中科院分区：
文献类型：
--
作者：
Pintilie, L;Alexe, M
提出了一种肖特基接触的金属-铁电-金属异质结模型。该模型适应的一般理论的金属-半导体整流接触的金属-铁电接触的特殊情况下，通过引入铁电极化作为一个片的表面电荷位于一个有限的距离，从电极界面，一个深的陷阱水平的高浓度，和静态和动态值的介电常数。所提出的模型上的肖特基接触，如内置电压，电荷密度，和耗尽宽度，以及解释的电流-电压和电容-电压特性的相关数量的后果进行了详细讨论。(c)2005年美国物理学会。
A model for metal-ferroelectric-metal heterostructures with Schottky contacts is proposed. The model adapts the general theories of metal-semiconductor rectifying contacts for the particular case of metal-ferroelectric contact by introducing the ferroelectric polarization as a sheet of surface charge located at a finite distance from the electrode interface, a deep trapping level of high concentration, and the static and dynamic values of the dielectric constant. Consequences of the proposed model on relevant quantities of the Schottky contact such as builtin voltage, charge density, and depletion width, as well as on the interpretation of the current-voltage and capacitance-voltage characteristics are discussed in detail. (c) 2005 American Institute of Physics.