Photoluminescence and Raman scattering of silicon nanocrystals prepared by silicon ion implantion into SiO2 films
Photoluminescence and Raman scattering of silicon nanocrystals prepared by silicon ion implantion into SiO2 films
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DOI：
10.1063/1.373836
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发表时间：
2000-07
影响因子：
3.2
通讯作者：
Guo Hua Li;K. Ding;Ye Chen;Hongyan Han;Zhuowei Wang
中科院分区：
文献类型：
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作者：
Guo Hua Li;K. Ding;Ye Chen;Hongyan Han;Zhuowei Wang
在室温下测量了硅离子注入SiO_2层制备的硅纳米晶的光致发光(PL)和拉曼光谱。详细研究了它们随退火温度的变化规律。在注入样品中观察到的光致发光峰来源于离子注入引起的SiO_2层缺陷。当热处理温度高于900℃时，观察到硅纳米晶的光致发光峰，红移到1.7 eV，在1100℃热退火时强度达到最大。利用直角散射组态观察到硅纳米晶的特征拉曼散射峰。与硅纳米晶有关的拉曼信号仅出现在900℃以上的样品中，这进一步证明了这些样品中形成了硅纳米晶。(C)2000年美国物理研究所。[S0021-8979(00)00215-2]。
Photoluminescence (PL) and Raman spectra of silicon nanocrystals prepared by Si ion implantion into SiO2 layers on Si substrate have been measured at room temperature. Their dependence on annealing temperature was investigated in detail. The PL peaks observed in the as-implanted sample originate from the defects in SiO2 layers caused by ion implantation. They actually disappear after thermal annealing at 800 degrees C. The PL peak from silicon nanocrystals was observed when thermal annealing temperatures are higher than 900 degrees C. The PL peak is redshifted to 1.7 eV and the intensity reaches maximum at the thermal annealing temperature of 1100 degrees C. The characterized Raman scattering peak of silicon nanocrystals was observed by using a right angle scattering configuration. The Raman signal related to the silicon nanocrystals appears only in the samples annealed at temperature above 900 degrees C. It further proves the formation of silicon nanocrystals in these samples. (C) 2000 American Institute of Physics. [S0021-8979(00)00215-2].